半导体学报2010，Vol.31Issue(4)：41-45,5.DOI:10.1088/1674-4926/31/4/044007
Total ionizing dose effects and annealing behavior for domestic VDMOS devices
Total ionizing dose effects and annealing behavior for domestic VDMOS devices
Gao Bo 1Yu Xuefeng 2Ren Diyuan 3Liu Gang 1Wang Yiyuan 2Sun Jing 1Cui Jiangwei2
作者信息
- 1. Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
- 2. Xinjiang Key Laboratory of Electronics Information Material and Device, Urumqi 830011, China
- 3. Graduate University of Chinese Academy of Sciences, Beijing
- 折叠
摘要
关键词
VDMOS device/total dose effects/annealing/γ radiationKey words
VDMOS device/total dose effects/annealing/γ radiation引用本文复制引用
Gao Bo,Yu Xuefeng,Ren Diyuan,Liu Gang,Wang Yiyuan,Sun Jing,Cui Jiangwei..Total ionizing dose effects and annealing behavior for domestic VDMOS devices[J].半导体学报,2010,31(4):41-45,5.
