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RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET

Sun Lingling Lü Binyi Liu Jun Chen Lei

半导体学报2010，Vol.31Issue(4)：52-56,5.

半导体学报2010，Vol.31Issue(4)：52-56,5.DOI:10.1088/1674-4926/31/4/044009

RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET

Sun Lingling ¹Lü Binyi ¹Liu Jun ¹Chen Lei¹

作者信息

1. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
折叠

摘要

关键词

RF-MOSFET/large-signal model/self heating

Key words

RF-MOSFET/large-signal model/self heating

引用本文复制引用

Sun Lingling,Lü Binyi,Liu Jun,Chen Lei..RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J].半导体学报,2010,31(4):52-56,5.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60706002) and the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China (Nos. 08515810103,2008C16017). （No. 60706002）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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