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Low power CMOS preamplifier for neural recording applications

Zhang Xu Pei Weihua Huang Beiju Chen Hongda

半导体学报2010，Vol.31Issue(4)：62-67,6.

半导体学报2010，Vol.31Issue(4)：62-67,6.DOI:10.1088/1674-4926/31/4/045002

Low power CMOS preamplifier for neural recording applications

Zhang Xu ¹Pei Weihua ¹Huang Beiju ¹Chen Hongda¹

作者信息

1. State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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摘要

关键词

neural signal amplifier/low noise/low power/subthreshold circuit design

Key words

neural signal amplifier/low noise/low power/subthreshold circuit design

引用本文复制引用

Zhang Xu,Pei Weihua,Huang Beiju,Chen Hongda..Low power CMOS preamplifier for neural recording applications[J].半导体学报,2010,31(4):62-67,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos. 60776024, 60877035, 60976026, 90820002) and the National High Technology Research and Development Program of China (Nos. 2007AA04Z329, 2007AA04Z254). （Nos. 60776024, 60877035, 60976026, 90820002）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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