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Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

He Jin Zheng Rui Zhang Lining Zhang Jian Lin Xinnan Chan Mansun

半导体学报2010，Vol.31Issue(6)：27-33,7.

半导体学报2010，Vol.31Issue(6)：27-33,7.DOI:10.1088/1674-4926/31/6/064001

Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region

He Jin ¹Zheng Rui ²Zhang Lining ³Zhang Jian ³Lin Xinnan ³Chan Mansun³

作者信息

1. Department of Electronics and Computer Engineering, Hong Kong University of Science & Technology, Hong Kong, China
2. Micro & Nano Electric Device and Integrated Technology Group, Key Laboratory of Integrated Microsystems, Peking University,Shenzhen Graduate
3. Micro & Nano Electric Device and Integrated Technology Group, Key Laboratory of Integrated Microsystems, Peking University,Shenzhen Graduate School, Shenzhen 518055, China
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摘要

关键词

non-classical CMOS/surrounding-gate MOSFETs/device physics/surface potential/accuracy/continuity issue

Key words

non-classical CMOS/surrounding-gate MOSFETs/device physics/surface potential/accuracy/continuity issue

引用本文复制引用

He Jin,Zheng Rui,Zhang Lining,Zhang Jian,Lin Xinnan,Chan Mansun..Continuous surface potential versus voltage equation of intrinsic surrounding-gate MOSFETs and analytic solution from accumulation to strong inversion region[J].半导体学报,2010,31(6):27-33,7.

基金项目

Project supported by the National Natural Science Foundation of China (No. 60876027), the Competitive Earmarked Program from the Research Grant Council of Hong Kong SAR, China (No.HKUST6289/04E), the Industry, Education and Academy Cooperation Program of Guangdong Province, China (No.2009B090300318), and the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (No.JC200903160353A). （No. 60876027）

半导体学报

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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