半导体学报2010，Vol.31Issue(6)：34-38,5.DOI:10.1088/1674-4926/31/6/064002
A new small-signal model for asymmetrical AlGaN/GaN HEMTs
A new small-signal model for asymmetrical AlGaN/GaN HEMTs
Ma Teng 1Hao Yue 1Chen Chi 1Ma Xiaohua1
作者信息
- 1. National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics,Xidian University, Xi'an 710071, China
- 折叠
摘要
关键词
small-signal model/GaN HEMT/parameter extraction/asymmetrical structureKey words
small-signal model/GaN HEMT/parameter extraction/asymmetrical structure引用本文复制引用
Ma Teng,Hao Yue,Chen Chi,Ma Xiaohua..A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J].半导体学报,2010,31(6):34-38,5.
