A new small-signal model for asymmetrical AlGaN/GaN HEMTsOA北大核心CSCDCSTPCD
A new small-signal model for asymmetrical AlGaN/GaN HEMTs
Ma Teng;Hao Yue;Chen Chi;Ma Xiaohua
National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics,Xidian University, Xi'an 710071, ChinaNational Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics,Xidian University, Xi'an 710071, ChinaNational Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics,Xidian University, Xi'an 710071, ChinaNational Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics,Xidian University, Xi'an 710071, China
small-signal modelGaN HEMTparameter extractionasymmetrical structure
small-signal modelGaN HEMTparameter extractionasymmetrical structure
《半导体学报》 2010 (6)
34-38,5
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