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Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

Chen Bin Yang Yintang Li Yuejin Liu Hongxia

半导体学报2010，Vol.31Issue(6)：65-69,5.

半导体学报2010，Vol.31Issue(6)：65-69,5.DOI:10.1088/1674-4926/31/6/064010

Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector

Chen Bin ¹Yang Yintang ¹Li Yuejin ¹Liu Hongxia¹

作者信息

1. Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China
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摘要

关键词

MSM structure/ultraviolet photodetector/Schottky contact/Ⅰ-Ⅴ characteristics

Key words

MSM structure/ultraviolet photodetector/Schottky contact/Ⅰ-Ⅴ characteristics

引用本文复制引用

Chen Bin,Yang Yintang,Li Yuejin,Liu Hongxia..Simulation and optimization of a 6H-SiC metal-semiconductor-metal ultraviolet photodetector[J].半导体学报,2010,31(6):65-69,5.

基金项目

Project supported by the Ire-Research Foundation from the National Ministries and Commissions,China (Nos.51323040118,513080302). （Nos.51323040118,513080302）

半导体学报

OA北大核心CSCDCSTPCD

ISSN：1674-4926

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