首页|期刊导航|半导体学报|An ultra-low-power 1 kb sub-threshold SRAM in the 180 nm CMOS process

An ultra-low-power 1 kb sub-threshold SRAM in the 180 nm CMOS process

Liu Ming Chen Hong Li Changmeng Wang Zhihua

半导体学报2010，Vol.31Issue(6)：144-147,4.

半导体学报2010，Vol.31Issue(6)：144-147,4.DOI:10.1088/1674-4926/31/6/065013

Liu Ming ¹Chen Hong ¹Li Changmeng ¹Wang Zhihua¹

作者信息

1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University,Beijing 100084, China
折叠

sub-threshold SRAM/11T SRAM cell/ultra-low-power SoC

sub-threshold SRAM/11T SRAM cell/ultra-low-power SoC

Liu Ming,Chen Hong,Li Changmeng,Wang Zhihua..An ultra-low-power 1 kb sub-threshold SRAM in the 180 nm CMOS process[J].半导体学报,2010,31(6):144-147,4.

Project supported by the National Natural Science Foundation of China (No. 60906010). （No. 60906010）

OA北大核心CSCDCSTPCDEI

ISSN：1674-4926

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