半导体学报2009，Vol.30Issue(10)：1-4,4.DOI:10.1088/1674-4926/30/10/102001
Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films
摘要
Abstract
Er-doped silicon-rich silicon nitride (SRN) films were deposited on silicon substrate by an RF magnetron reaction sputtering system. After high temperature annealing, the films show intense photoluminescence in both the visible and infrared regions. Besides broad-band luminescence centered at 780 nm which originates from silicon nanocrystals, resolved peaks due to transitions from all high energy levels up to ~2H_(11/2) to the ground state of Er~(3+) are observed. Raman spectra and HRTEM measurements have been performed to investigate the structure of the films, and possible excitation processes are discussed.关键词
photoluminescence/ silicon nitride/ Er dopingKey words
photoluminescence/ silicon nitride/ Er doping分类
信息技术与安全科学引用本文复制引用
Ding Wuchang,Zuo Yuhua,Zhang Yun,Guo Jianchuan,Cheng Buwen,Yu Jinzhong,Wang Qiming,Guo Hengqun,Lü Peng,Shen Jiwei..Photoluminescence spectroscopy of sputtering Er-doped silicon-rich silicon nitride films[J].半导体学报,2009,30(10):1-4,4.基金项目
Project supported by the National Natural Science Foundation of China (No. 60336010) and the State Key Development Program for Basic Research of China (No. 2006CB302802). （No. 60336010）
