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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

Zhao Jianzhi Lin Zhaojun Corrigan T D Zhang Yu Li Huijun Wang Zhangguo

半导体学报2009，Vol.30Issue(10)：10-12,3.
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半导体学报2009，Vol.30Issue(10)：10-12,3.DOI:10.1088/1674-4926/30/10/102003

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

Zhao Jianzhi 1Lin Zhaojun 1Corrigan T D 2Zhang Yu 1Li Huijun 3Wang Zhangguo4

作者信息

  • 1. School of Physics, Shandong University, Jinan 250100, China
  • 2. Department of Physics, University of Maryland, College Park, Maryland 20740, USA
  • 3. School of Information Science and Engineering, Shandong University, Jinan 250100, China
  • 4. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 折叠

摘要

Abstract

The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2DEG) is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors (AlGaN/GaN HFETs). Current-voltage (I-V) characteristics for ungated AlGaN/GaN heterostructures and capacitance-voltage (C-V) characteristics for AlGaN/GaN HFETs are obtained, and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated. It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50% compared with the electron mobility of Hall measurements. We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.

关键词

AlGaN/GaN heterostructure/ anneal/ ohmic contact metals/ 2DEG/ electron mobility

Key words

AlGaN/GaN heterostructure/ anneal/ ohmic contact metals/ 2DEG/ electron mobility

分类

信息技术与安全科学

引用本文复制引用

Zhao Jianzhi,Lin Zhaojun,Corrigan T D,Zhang Yu,Li Huijun,Wang Zhangguo..Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J].半导体学报,2009,30(10):10-12,3.

基金项目

Project supported by the National Natural Science Foundation of China (No. 10774090) and the State Key Development Program for Basic Research of China (No. 2007CB936602). （No. 10774090）

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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