半导体学报2009，Vol.30Issue(10)：27-32,6.DOI:10.1088/1674-4926/30/10/104001
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
摘要
Abstract
Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along <110> and <100> channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.关键词
hole mobility enhancement/ additive uniaxial strain/ biaxial strain/ combinational strain/ channel directionKey words
hole mobility enhancement/ additive uniaxial strain/ biaxial strain/ combinational strain/ channel direction分类
信息技术与安全科学引用本文复制引用
Zhao Shuo,Guo Lei,Wang Jing,Xu Jun,Liu Zhihong..Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs[J].半导体学报,2009,30(10):27-32,6.基金项目
Project supported by the National Natural Science Foundation of China (Nos. 60636010, 60820106001). （Nos. 60636010, 60820106001）
