半导体学报2009，Vol.30Issue(10)：33-37,5.DOI:10.1088/1674-4926/30/10/104002
Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics
Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics
摘要
Abstract
MOS capacitors with hafnium oxynitride (HfON) gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method. A large amount of fixed charges and interface traps exist at the Ge/HfON interface. HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing. A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier. Using this method, well behaved capacitance-voltage and current-voltage characteristics were obtained. Finally hystereses are compared under different process conditions and possible causes are discussed.关键词
Ge MOS capacitor/ HfON/ Ge oxides/ silicon nitrideKey words
Ge MOS capacitor/ HfON/ Ge oxides/ silicon nitride分类
信息技术与安全科学引用本文复制引用
Hu Aibin,Xu Qiuxia..Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics[J].半导体学报,2009,30(10):33-37,5.基金项目
Project supported by the State Key Development Program for Basic Research of China (No. 2006CB302704). （No. 2006CB302704）
