半导体学报2009，Vol.30Issue(10)：46-50,5.DOI:10.1088/1674-4926/30/10/104005
Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS
摘要
Abstract
A measuring technique based on the CP (charge pumping) method for hot-carrier degradation measure ment of high voltage N-LDMOS is researched in depth. The impact of the special configuration on the CP spectrum and the gate voltage pulse frequency range which is suitable for high voltage N-LDMOS in CP measurements is investigated in detail. At the same time, the impacts of different reverse voltage applied on the source and drain electrodes and of the gate pulse shape on the CP curve change in N-LDMOS are also proposed and analyzed. The conclusions give guidance on measuring the density of interface states with experimental instructions and offer theoretic instructions for analyzing CP curves in high voltage N-LDMOS more accurately.关键词
CP measurements/ N-LDMOS/ hot-carrier/ interface statesKey words
CP measurements/ N-LDMOS/ hot-carrier/ interface states分类
信息技术与安全科学引用本文复制引用
Qian Qinsong,Liu Siyang,Sun Weifeng,Shi Longxing..Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS[J].半导体学报,2009,30(10):46-50,5.基金项目
Project supported by the Jiangsu Provincial Natural Science Foundation (No. BK2008287). （No. BK2008287）
