半导体学报2009，Vol.30Issue(10)：81-85,5.DOI:10.1088/1674-4926/30/10/105005
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications
摘要
Abstract
A zero-pole cancellation transimpedance amplifier (TIA) has been realized in 0.35 μm RF CMOS tech nology for Gigabit Ethernet applications. The TIA exploits a zero-pole cancellation configuration to isolate the input parasitic capacitance including photodiode capacitance from bandwidth deterioration. Simulation results show that the proposed TIA has a bandwidth of 1.9 GHz and a transimpedance gain of 65 dB·Ω for 1.5 pF photodiode capaci tance, with a gain-bandwidth product of 3.4 THz·Ω. Even with 2 pF photodiode capacitance, the bandwidth exhibits a decline of only 300 MHz, confirming the mechanism of the zero-pole cancellation configuration. The input resis tance is 50 Ω, and the average input noise current spectral density is 9.7 pA/(Hz)~(1/2). Testing results shows that the eye diagram at 1 Gb/s is wide open. The chip dissipates 17 mW under a single 3.3 V supply.关键词
CMOS/ transimpedance amplifier/ Gigabit EthernetKey words
CMOS/ transimpedance amplifier/ Gigabit Ethernet分类
信息技术与安全科学引用本文复制引用
Huang Beiju,Zhang Xu,Chen Hongda..1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications[J].半导体学报,2009,30(10):81-85,5.基金项目
Project supported by the National Natural Science Foundation of China (Nos. 60536030, 60502005) and the National High Technology Research and Development Program of China (Nos. 2007AA01Z2A5, 2006AA01Z239, 2007AA03Z454). （Nos. 60536030, 60502005）
