半导体学报2009，Vol.30Issue(10)：108-111,4.DOI:10.1088/1674-4926/30/10/105009
10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier
10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier
摘要
Abstract
A 10 Gb/s OEIC (optoelectronic integrated circuit) optical receiver front-end has been studied and fab ricated based on the φ-76 mm GaAs PHEMT process; this is the first time that a limiting amplifier (LA) has been designed and realized using depletion mode PHEMT. An OEIC optical receiver front-end mode composed of an MSM photodiode and a current mode transimpedance amplifier (TIA) has been established and optimized by simu lation software ATLAS. The photodiode has a bandwidth of 10 GHz, a capacitance of 3 fF/μm and a photosensitive area of 50×50 μm~2. The whole chip has an area of 1511×666 μm~2. The LA bandwidth is expanded by spiral inductance which has been simulated by software HFSS. The chip area is 1950×1910μm~2 and the measured results demonstrate an input dynamic range of 34 dB (10-500 mVpp) with constant output swing of 500 tnVpp.关键词
OEIC/ MSM photodiode/ current mode/ TIA/ depletion mode PHEMT/ limiting amplifierKey words
OEIC/ MSM photodiode/ current mode/ TIA/ depletion mode PHEMT/ limiting amplifier分类
信息技术与安全科学引用本文复制引用
Fan Chao,Chen Tangsheng,Yang Lijie,Feng Ou,Jiao Shilong,Wu Yunfeng,Ye Yutang..10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier[J].半导体学报,2009,30(10):108-111,4.基金项目
Project supported by the National Key Laboratory of Monolithic Integrated Circuits and Modules Foundation of China (No. 9140C 1406020708). （No. 9140C 1406020708）
