半导体学报2009，Vol.30Issue(11)：14-16,3.DOI:10.1088/1674-4926/30/11/113001
Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition
Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition
摘要
Abstract
Nonpolar (11(2)0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1(1)02) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement.It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.关键词
GaN/ anisotropic/ HRXRD/ nonpolarKey words
GaN/ anisotropic/ HRXRD/ nonpolar分类
数理科学引用本文复制引用
Xu Shengrui,Zhou Xiaowei,Hao Yue,Mao Wei,Zhang Jincheng,Zhang Zhongfen,Bai Lin,Zhang Jinfeng,Li Zhiming..Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition[J].半导体学报,2009,30(11):14-16,3.基金项目
Project supported by the National Natural Science Foundation of China (Nos. 60736033, 60676048) and the National Key Science and Technology Special Project (No. 2008ZX01002-003). （Nos. 60736033, 60676048）
