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Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Zhang Huafu Liu Hanfa Zhou Aiping Yuan Changkun

半导体学报2009,Vol.30Issue(11):17-20,4.
半导体学报2009,Vol.30Issue(11):17-20,4.DOI:10.1088/1674-4926/30/11/113002

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Zhang Huafu 1Liu Hanfa 1Zhou Aiping 1Yuan Changkun1

作者信息

  • 1. School of Science, Shandong University of Technology, Zibo 255049, China
  • 折叠

摘要

Abstract

Highly transparent and conducting AI-Zr co-doped zinc oxide (ZAZO) thin films were successfully prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 mm, it is found that the lowest resistivity is 6.9×10~(-4) Ω·cm.All the deposited films show a high average transmittance of above 92% in the visible range.

关键词

Al-Zr co-doped zinc oxide films/ transparent conducting films/ magnetron sputtering/ distance between target and substrate

Key words

Al-Zr co-doped zinc oxide films/ transparent conducting films/ magnetron sputtering/ distance between target and substrate

分类

数理科学

引用本文复制引用

Zhang Huafu,Liu Hanfa,Zhou Aiping,Yuan Changkun..Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films[J].半导体学报,2009,30(11):17-20,4.

半导体学报

OA北大核心CSCDCSTPCDEI

1674-4926

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