半导体学报2009，Vol.30Issue(11)：26-30,5.DOI:10.1088/1674-4926/30/11/113004
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating
摘要
Abstract
The temperature field in the vertical metalorganic chemical vapor deposition (MOCVD) reactor chamber used for the growth of GaN materials is studied using the finite element analysis method (FEM). The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.关键词
MOCVD/ finite element/ temperature/ suspectorKey words
MOCVD/ finite element/ temperature/ suspector分类
物理学引用本文复制引用
Li Zhiming,Xu Shengrui,Zhang Jincheng,Chang Yongming,Ni Jingyu,Zhou Xiaowei,Hao Yue..Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating[J].半导体学报,2009,30(11):26-30,5.基金项目
Project supported by the National Natural Science Foundation of China (No. 60736033). （No. 60736033）
