半导体学报2009，Vol.30Issue(11)：47-50,4.DOI:10.1088/1674-4926/30/11/114005
Novel lateral IGBT with n-region controlled anode on SOI substrate
Novel lateral IGBT with n-region controlled anode on SOI substrate
Chen Wensuo 1Xie Gang 1Zhang Bo 1Li Zehong 1Li Zhaoji1
作者信息
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
- 折叠
摘要
Abstract
A new lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called an n-region controlled anode LIGBT (NCA-LIGBT), is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters (n-region doping concentration, length, thickness and p-base doping concentration) show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.关键词
turn-off time/ on-state voltage drop/ NDR/ power ICsKey words
turn-off time/ on-state voltage drop/ NDR/ power ICs分类
数理科学引用本文复制引用
Chen Wensuo,Xie Gang,Zhang Bo,Li Zehong,Li Zhaoji..Novel lateral IGBT with n-region controlled anode on SOI substrate[J].半导体学报,2009,30(11):47-50,4.
