电子学报2009，Vol.37Issue(11)：2476-2479,4.
剩余应变对半导体量子点边带能影响的数值分析
Numerical Analyzing of Effect of the Residual Strain on the Energy Levels in Semiconductor Quantum Dot
摘要
Abstract
It is derived from elastic theory that the expressions of shifts of the energy levels in semiconductor quantum dots. The strains of the semiconductor quantum dots are calculated by finite element method. By combing the two results, the variation of all energy levels in strain quantum dot are educed. It is pointed that the conductor band will be decreased (or risen). The shift of the decreased (or risen) is decided by material of the quantum. The heavy hole band and the light hole band are split - off in stain quantum dot. The shifts are decided by the material and the shape of the quantum dot.关键词
量子点/剩余应变/边带能/有限元法Key words
quantum dot/ residual strain/ energy level shifts/ finite element method分类
信息技术与安全科学引用本文复制引用
杨红波,俞重远..剩余应变对半导体量子点边带能影响的数值分析[J].电子学报,2009,37(11):2476-2479,4.基金项目
天津市自然科学基金(No.07JCYBJC06000) （No.07JCYBJC06000）
天津大学青年教师基金(No.5110122) （No.5110122）
国家自然科学基金(No.50672064) （No.50672064）
