首页|期刊导航|高技术通讯（英文版）|Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals
高技术通讯（英文版）2009，Vol.15Issue(3)：315-318,4.DOI:10.3772/j.issn.1006-6748.2009.03.016
Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals
Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals
摘要
Abstract
The V-shaped electro-optical properties control is investigated by an equivalent circuit model. Simulation results show that genuine V-shaped form is only observed at hysteresis inversion frequency, and below and above this frequency an anomalous and normal hysteresis are observed. And the inversion frequency decreases with the resistance of ferroelectric liquid crystal (FLC) layer following logfi=-alogRLC+b. The results are in good accordance with the reported experimental results.关键词
ferroelectric liquid crystal (FLC)/ thresholdless switching/ V-shaped/ circuit model/ hysteresis inversion frequencyKey words
ferroelectric liquid crystal (FLC)/ thresholdless switching/ V-shaped/ circuit model/ hysteresis inversion frequency分类
信息技术与安全科学引用本文复制引用
Wang Mengyao ,Pan Wei,Luo Bin,Zhang Weili,Zou Xihua..Circuit-level simulation of the hysteresis inversion frequency of the ferroelectric liquid crystals[J].高技术通讯（英文版）,2009,15(3):315-318,4.基金项目
Supported by the National Natural Science Foundation of China (No. 10174057 （）
90201011), the Key Project of Chinese Ministry of Education (No. 2005-105148), and the Research Fund for the Doctoral Program of Higher Education of China (No. 20070613058). （No. 2005-105148）
