人工晶体学报2009，Vol.38Issue(5)：1142-1145,1159,5.
掺杂AgCl中光电子衰减特性研究
Study on Characteristic of Photoelectron Decay in Doping AgCl
摘要
Abstract
The decay spectra of the free and shallow-trapped photoelectrons at the first exposure time in cubic AgCl microcrystals doped with [Fe(CN)_6]~(4-) were obtained by microwave absorption and dielectric spetrum mesurement technique. It is found that the free photoelectrons decay time increased from 116ns to 1133 ns as the doping concentration increasing. By analyzing the photoelectrons decay curve, it is also found that the doping concentration increasing, the first slower decay section becomes faster and the second faster decay section slower, as a whole the decay time increased. The variation of the doping concentration has greater impact on the photoelectrons later decay part. The result shows that the doping introduces shallow electron traps which can delay the decay process of the photoelectrons, and with the doping concentration increasing, the characteristic of shallow electron traps becomes remarkable.关键词
微波吸收介电谱/掺杂浓度/光电子衰减/浅电子陷阱Key words
microwave absorption and dielectric spectrum/ doping concentration/photoelectrons decay/shallow electron traps分类
数理科学引用本文复制引用
代秀红,张荣香,李晓苇,董国义,杨少鹏,韩理..掺杂AgCl中光电子衰减特性研究[J].人工晶体学报,2009,38(5):1142-1145,1159,5.基金项目
国家自然科学基金(No.10354001) （No.10354001）
教育部科学技术研究重点项目(No.01011) （No.01011）
河北省自然科学基金(No.603138) （No.603138）
河北大学科研基金资助项目(No.2005Q05) （No.2005Q05）
