人工晶体学报2009，Vol.38Issue(5)：1189-1192,1198,5.
热处理工艺对室温制备ZnO:Al薄膜结构与光电性能的影响
Effects of Heat Treatment Process on Structure and Photoelectric Properties of ZnO: Al Films Deposited at Room Temperature
摘要
Abstract
ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure, electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress, increasing the carrier concentration and the mobility, decreasing electrical resistivities to a value of 8.6×10~(-4) Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films, which is above 86%.关键词
ZnO∶Al/光电性能/磁控溅射/退火工艺Key words
ZnO∶Al/ optical and electrical properties/ magnetron sputtering/ annealing technology分类
数理科学引用本文复制引用
任明放,王华,许积文,杨玲..热处理工艺对室温制备ZnO:Al薄膜结构与光电性能的影响[J].人工晶体学报,2009,38(5):1189-1192,1198,5.基金项目
广西高校百名中青年学科带头人资助计划项目(No.RC20060809014) （No.RC20060809014）
