物理学报2009，Vol.58Issue(11)：7765-7772,8.
在Si-Ge晶体外延生长中的RHEED花样研究
A study of RHEED pattern from the epitaxial growth of Si-Ge crystal
摘要
Abstract
The patterns of Reflection high energy electron diffraction (RHEED) from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetieal diffraction theory of crystal. The transmission pattern is studied and interpreted, which relates to the rough surface after crystal growth. The RHEED patterns of polyerystalline tings and twin crystal and their evolvements are analyzed with respee to the epitaxial growth conditions.关键词
硅锗外延生长/反射式高能电子衍射/表面重构/透射式衍射花样Key words
Si-Ge epitaxial growth/RHEED/surface reconstruction/transmission pattern分类
数理科学引用本文复制引用
张冲,叶辉,张磊,皇甫幼睿,刘旭..在Si-Ge晶体外延生长中的RHEED花样研究[J].物理学报,2009,58(11):7765-7772,8.基金项目
浙江省自然科学基金(批准号:y407109)资助的课题.Project supported by the Natural Science Foundation of Zhejiang Province, China (Grant No.Y407109). （批准号:y407109）
