物理学报2009，Vol.58Issue(11)：7891-7896,6.
吸收层特性和异质结界面电荷对12.5μm长波HgCdTe光伏探测器响应率的影响研究
Effects of absorption layer parameters and hetero-interface charge on photoresponse of 12.5 long-wavelength HgCdTe photodiode
摘要
Abstract
The effects of absorption layer parameters and hetero-interface charge on photoresponse of long-wavelength HgCdTe photodiode have been studied. The correlations between thickness of absorption layer and absorption length and diffusion length are investigated. An empirical formula is proposed to estimate the optimal thickness of absorption layer. Our theoretical investigations indicate that, when the wavelength of incident light is longer than the cut-off wavelength, the photoresponse monotonically increases with the increase of absorption layer thickness, and saturates subsequently. The wavelength of the maximal photoresponse increases with the increase of absorption layer thickness, and tends to shift toward long wavelength region. The optimal absorption layer thickness increases with increasing minority carrier life time and wavelength of incident light. It is found that the positive interface charge can induce a p-n junction at the substrate interface and significantly reduce the photoresponse. By using the metal-oxide-semiconductor diode model, possible physics mechanisms are investigated, and an approach is proposed to reduce the effects of hetero-interface charge on the photoresponse.关键词
长波HgCdTe器件/光伏型红外探测器/光响应率/少子寿命Key words
long-wavelength HgCdTe photodiode/photovoltaie inferred detector/photoresponse/minority carrier life time分类
化学化工引用本文复制引用
胡伟达,殷菲,叶振华,全知觉,胡晓宁,李志锋,陈效双,陆卫..吸收层特性和异质结界面电荷对12.5μm长波HgCdTe光伏探测器响应率的影响研究[J].物理学报,2009,58(11):7891-7896,6.基金项目
国家自然科学基金(批准号:60576068,60706012,10734090,107,17162)、上海-应用材料研究与发展基金(批准号:08520740600)和航空科学基金(批准号:20080190001)资助的课题.Project supported by the National Natural Science Foundation of China (Grant Nos. 60576068, 60706012, 10734090, and 10747162), Applied Materials Shanghai Research & Development Fund (Grant No. 085207406(X)), and Aviation Science Fund (Grant No. 20080190001). （批准号:60576068,60706012,10734090,107,17162）
