物理学报2011，Vol.60Issue(7)：608-611,4.
GaAs自旋注入及巨霍尔效应的研究
Spin injection in GaAs and giant Hall effect
摘要
Abstract
In spintronics, general spin injection is achieved by the superlattice, spin valve, tunnel junction, other typical method of spin injection is to dilute magnetic semiconductor such as： GaMnAs. In this paper, spin Fe particles are injected into the GaAs matrix by using the magnetron sputtering to form the granular film （GaAs） 19 Fe81, in which saturated Hall resistivity pxys, is shown to be 15 μΩ·cm at room temperature, which is about 2 orders larger than that of pure Fe. So the spin injection is successfully realized.关键词
自旋注入/颗粒膜/巨霍尔效应Key words
spin injection/granular film/Hall effect分类
数理科学引用本文复制引用
王志明..GaAs自旋注入及巨霍尔效应的研究[J].物理学报,2011,60(7):608-611,4.基金项目
南京大学固体微结构物理实验室开发课题（批准号：M23005）资助的课题. （）
