物理学报2011，Vol.60Issue(7)：749-755,7.
大功率全方位反射镜发光二极管性能研究
Performance of power omnidirectimal reflector LED
摘要
Abstract
In this paper, GaN-based InGaN/GaN MQW power LEDs are fabricated based on the existing technology through a simple processing, and their optical, electrical, and color properties are tested. Results show that the luminous intensity of the chips with omnidirectional reflector（ODR） has an improvement of 244mcd over that with the ordinary chips, and that the ODR LED＇ s luminous flux, the efficiency and the color purity are improved by 6.04% , 5.74% , 78.64% respectively. One of the advantages of the ODR LED is its low color temperature, which is greatly lower than that of the ordinary LED.关键词
发光二极管/ODR/色温Key words
light-emitting diodes/ODR/color temperature分类
信息技术与安全科学引用本文复制引用
董雅娟,张俊兵,陈海涛,曾祥华..大功率全方位反射镜发光二极管性能研究[J].物理学报,2011,60(7):749-755,7.基金项目
国家自然科学基金（批准号：11004170）和江苏省科技项目（批准号：BG2007026）资助的课题. （）
