物理学报2011，Vol.60Issue(7)：774-778,5.
同位素示踪法研究铜薄膜在水汽中的氧化传质机理
Transport mechanism of copper thin film oxidation by isotopic labeling
摘要
Abstract
vapor using structure of analysed by oxidation is paper, a new method is proposed to investigate the transport mechanism of copper thin film oxidation in water H^162O/H^182O isotopic labeling. Copper thin films are prepared on glass substrates by vacuum deposition. The copper oxide film is analysed by X-ray diffraction （XRD）. The distributions of^16O and^18O in the oxide film are secondary ion mass spectroscopy （ SIMS）. The results demonstrate that the transport mechanism of copper film short-circuit diffusion mechanism.关键词
同位素示踪/短路扩散/铜薄膜/H2^18OKey words
isotopic labeling/short circuit diffusion/copper thin film/H^182O分类
数理科学引用本文复制引用
曹思,龚佳,钟澄,李劲,蒋益明..同位素示踪法研究铜薄膜在水汽中的氧化传质机理[J].物理学报,2011,60(7):774-778,5.基金项目
国家自然科学基金（批准号：50871031,50701010）,上海市自然科学基金（批准号：09ZRl402600）和上海市基础研究重点项目（批准号：09JCl401600）资助的课题. （）
