物理学报2011，Vol.60Issue(7)：547-552,6.
Ge 组分对应变 Si1-x Gex 沟道 P-MOSFET 电学特性影响
Effects of Ge fraction on strained Si1-x Gex electrical characteristics of channel p-MOSFET
摘要
Abstract
The capacitance-voltage characteristics and the variations of threshold vohage of strained Si1-x Gex channel p-MOSFET with Ge fraction are investigated via two-dimansional numerical simulation. The results indicate that with the increase of Ge fraction, the subthreshold current increases remarkably, and that the gate capacitance changes significantly when the device is in inversion, moreover, the Ge fraction dependence of the variation of threshold voltage is linear. Combining the change of the Si1-x Gex channel length with the relevant physical model, the mobility of holes in channel is demonstrated to be inversely proportional to the derivative of the total resistances with respect to the channel length in a weak applied field.关键词
应变Si1-x/Gex/沟道/p-MOSFET/空穴迁移率/栅电容Key words
strained Si1-x Gex channel/p-MOSFET/hole mobility/gate capacitance分类
信息技术与安全科学引用本文复制引用
杨洲,王茺,王洪涛,胡伟达,杨宇..Ge 组分对应变 Si1-x Gex 沟道 P-MOSFET 电学特性影响[J].物理学报,2011,60(7):547-552,6.基金项目
国家自然科学基金（批准号：10964016,60567001）,教育部科学技术研究重点项目（批准号：210207）和云南省自然基金重点项目（批准号：2008CC012）资助的课题. （）
