物理学报2011，Vol.60Issue(7)：508-511,4.
纳米折叠InGaN／GaNLED材料生长及器件特性
Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED
摘要
Abstract
GaN-based LED wafers with nano-folding InGaN/GaN multiple quantum wells （MQWs） are grown on n-GaN nanopillar array templates which are fabricated using self assembled Ni nanodots as etching mask. Photoluminescence （PL） spectra of the wafer show uniform light emission wavelength over the whole area of it. No blue shift of the main peak is observed in the electroluminescence （EL） spectra of the LED devices fabricated with the wafer as the injection current increases from 10 mA to 80 mA. This can be ascribed to the reduced quantum confinement Stark effect （QCSE） and the resulting less band gap tilted by strain relaxation in the nano-folded MQWs. The device shows an excellent rectifying behavior with a forward voltage of 4.6 V under 20 mA injection current.关键词
纳米柱LED/光致发光/电致发光Key words
nano-LED/photoluminescence （PL）/electroluminescence （EL）分类
信息技术与安全科学引用本文复制引用
陈贵锋,张书明,谭小动,万尾甜,沈俊,郝秋艳,唐成春,朱建军,刘宗顺,赵德刚..纳米折叠InGaN／GaNLED材料生长及器件特性[J].物理学报,2011,60(7):508-511,4.基金项目
天津市自然科学基金（批准号：IOJCYBJC03000）和中国科学院半导体研究所集成光电子国家重点实验室资助的课题. （）
