物理学报2011，Vol.60Issue(7)：573-581,9.
亚100nm应变Si／SiGe nMOSFET阈值电压二维解析模型
Two-dimensional threshold voltage model of sub-lO0 nm strained-Si/SiGe nMOSFET
摘要
Abstract
In this paper, based on the two-dimensional （2D） Possion＇ s equation, an analytical model of threshold voltage, which is applied to a sub-100nm strained-Si/SiGe nMOSFET, is pro- posed. The secondary effects induced by reducing size such as short-channel effects, quantum mechanical effects are also taken into consideration in order to ensure the accuracy of the model. Then the evidence for the validity of our model is derived from the comparison between analytical results and the simulation data from the 2D device simulator ISE. Finally, the influence of conventional arts in sub-100 nm device fabrication on threshold voltage is also discussed. The proposed model can also be easily used for reasonable analysis and design of sub-100nm strained-Si/SiGe nMOSFET.关键词
亚lOOnm/应变Si／SiGe/nMOSFET/二维表面势/阈值电压Key words
sub-100 nm/strained-Si/SiGe nMOSFET/2D surface potential/threshold voltage分类
信息技术与安全科学引用本文复制引用
王冠宇,张鹤鸣,王晓艳,吴铁峰,王斌..亚100nm应变Si／SiGe nMOSFET阈值电压二维解析模型[J].物理学报,2011,60(7):573-581,9.基金项目
国家部委资助项目（批准号：51308040203,6139801）,中央高校基本科研业务费（批准号：72105499,72104089）和陕西省自然科学基础研究计划（批准号：2010JQ8008）资助的课题. （）
