物理学报2011，Vol.60Issue(7)：582-588,7.
AIGaN／GaN高速电子迁移率晶体管器件电流坍塌效应与界面热阻和温度的研究
Current collapse effect, interfacial thermal resistance and work temperature for AIGaN/GaN HEMTs
顾江 1王强 2鲁宏1
作者信息
- 1. 常熟理工学院物理电子系,常熟215500
- 2. 南通大学电子信息学院,南通226019
- 折叠
摘要
Abstract
The effects of operating temperature and the interfacial thermal resistance on device are researched by using a two- dimensional numerical simulator. A comparison between the simulated results and the experiment data demonstrates that hot electrons make a significant contribution to the negative differential output conductance which will increase with the increase of the work temperature under low drain voltage, and under upper drain voltage, the self-heating effect is an important factor to the current collapse which will become more serious with the work temperature and interfacial thermal resistance inereasing.关键词
AIGaN／GaN/HEMT器件/热电子效应/自加热效应/电流坍塌效应Key words
AlGaN/GaN HEMT devices/hot electron effect/self-heating effect/current collapse effect分类
信息技术与安全科学引用本文复制引用
顾江,王强,鲁宏..AIGaN／GaN高速电子迁移率晶体管器件电流坍塌效应与界面热阻和温度的研究[J].物理学报,2011,60(7):582-588,7.
