红外技术2011，Vol.33Issue(7)：429-432,4.
不同结构的反射式GaAs光电阴极的光谱特性比较
Comparison of Spectral Characteristics on Different Reflection-Mode GaAs Photocathodes
摘要
Abstract
Three types of reflection-mode GaAs photocathodes were grown by molecular beam epitaxy, in which one sample is a traditional reflection-mode GaAs photocathode, and the other two samples are the GaAlAs buffer layer based uniform-doping and gradient-doping GaAs reflection-mode GaAs photocathodes.The spectral response test results after activation experiments show that compared with the traditional reflection-mode GaAs photocathode, the GaAlAs buffer layer based uniform-doping reflection-mode one obtains a better long-wave response, and the GaAlAs buffer layer based gradient-doping reflection-mode one can achieve a better photoemission performance and a more flat spectral response curve than other reflection-mode ones. By fitting spectral response curves, the obtained electron diffusion length and electron surface escape probability for the GaAlAs buffer layer based gradient-doping reflection-mode GaAs photocathode are increased, which causes the higher integral sensitivity and long-wave response.关键词
GaAs光电阴极/反射式/光谱响应/缓冲层/梯度掺杂Key words
GaAs photocathode/ reflection-mode/ spectral response/ buffer layer/ gradient-doping分类
信息技术与安全科学引用本文复制引用
高频,张益军..不同结构的反射式GaAs光电阴极的光谱特性比较[J].红外技术,2011,33(7):429-432,4.基金项目
国家自然科学基金项目,编号:60678043,60801036. （）
