现代电子技术2011，Vol.34Issue(14)：141-143,147,4.
基于不同VTH值的新型CMOS电压基准
New CMOS Voltage Reference Based on Different VTH Value
摘要
Abstract
The traditional reference circuits mainly employ the bandgap reference scheme, which obtains a zero temperature coefficient based on forward voltage with negative temperature coefficient of diode p-n junction and △VBE voltage with positive temperature coefficient. To overcome the compatibility defect of BJT and CMOS technology, a new CMOS reference based on different VTH values was designed by using the temperature coefficient of NMOS and PMOS threshold voltages (VTHN and VTHP) which are same in direction but different in magnitude. There is no amplifier and BJT in the circuit, whose structure is simple, and suitable for standard CMOS process integration. The circuit passed the Hspice validation. Its output reference voltage is 1. 22 V, temperature coefficient is merely 30 ppm/℃ at - 40～+85 ℃ and supply voltage regulatian factoris 1. 996 mV/V when supply voltages is 2. 6～5. 5 V at 25 ℃.关键词
CMOS/温度补偿/阈值电压/放大器/BJTKey words
CMOS/ temperature compensation/ threshold voltage/ OPAMP/ BJT分类
信息技术与安全科学引用本文复制引用
崔智军,王庆春..基于不同VTH值的新型CMOS电压基准[J].现代电子技术,2011,34(14):141-143,147,4.基金项目
陕西省教育厅科学研究计划资助项目(07JK176),安康学院专项科研项目(AYQDZR2010002 ) （07JK176）
安康学院高层次人才科研专项项目(AYQDZR20) （AYQDZR20）
