半导体学报2011，Vol.32Issue(6)：40-43,4.DOI:10.1088/1674-4926/32/6/064005
Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT*
Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT*
摘要
Abstract
We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas. Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel. A photocurrent is generated when the electron channel is strongly modulated by the gate voltage. Despite the large channel length and gate-source/drain distance,significant horizontal and perpendicular fields are achieved. The device is well described by the self-mixing ofterahertz fields in the electron channel. The noise-equivalent power and responsivity are estimated to be 100 nW/(√Hz) and 3 mA/W at 292 K, respectively. No decrease in responsivity is observed up to a modulation frequency of 5 kHz.The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity.关键词
terahertz detector/ high electron mobility transistor/ mixing/ two-dimensional electron gasKey words
terahertz detector/ high electron mobility transistor/ mixing/ two-dimensional electron gas引用本文复制引用
ZhouYu,Wu Dongmin,Lou Shitao,Qin Hua,Zhang Baoshun,Sun Jiandong,Sun Yunfei,Zhang Zhipeng,Lin Wenkui,Liu Hongxin,Zeng Chunhong,Lu Min,Cai Yong..Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT*[J].半导体学报,2011,32(6):40-43,4.基金项目
Project supported by the National Basic Research Program of China (No.G2009CB929300),the Knowledge Innovation Program of the Chinese Academy of Sciences (No.Y0BAQ31001),and the National Natural Science Foundation of China (No.60871077). （No.G2009CB929300）
