半导体学报2011，Vol.32Issue(6)：60-63,4.DOI:10.1088/1674-4926/32/6/064010
Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier*
Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier*
摘要
Abstract
A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled.关键词
semiconductor optical amplifier (SOA)/ current density/ amplified spontaneous emission (ASE)/ gain characteristicKey words
semiconductor optical amplifier (SOA)/ current density/ amplified spontaneous emission (ASE)/ gain characteristic引用本文复制引用
Wang Hanchao,Huang Lirong,Shi Zhongwei..Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier*[J].半导体学报,2011,32(6):60-63,4.基金项目
Project supported by the National High Technology Research and Development Program of China (No.2007AA03Z414) and the National Natural Science Foundation of China (No.60777019). （No.2007AA03Z414）
