半导体学报2011，Vol.32Issue(6)：55-59,5.DOI:10.1088/1674-4926/32/6/064009
Modeling and characterization of shielded low loss CPWs on 65 nm node silicon*
Modeling and characterization of shielded low loss CPWs on 65 nm node silicon*
摘要
Abstract
Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeterwave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology. A physical-based model is proposed to describe the frequencydependent per-unit-length L, C, R and G parameters. Starting with a basic CPW structure, the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model. The accuracy of the model is confirmed by experimental results.关键词
CMOS/ CPW/ shield/ modelKey words
CMOS/ CPW/ shield/ model引用本文复制引用
Wang Hongru,Yang Dongxu,Zhang Li,Zhang Lei,Yu Zhiping..Modeling and characterization of shielded low loss CPWs on 65 nm node silicon*[J].半导体学报,2011,32(6):55-59,5.基金项目
Project supported by the State Key Development Program for Basic Research of China (No.2010CB327404). （No.2010CB327404）
