半导体学报2011，Vol.32Issue(6)：91-95,5.DOI:10.1088/1674-4926/32/6/065005
Ka-band IQ vector modulator employing GaAs HBTs*
Ka-band IQ vector modulator employing GaAs HBTs*
摘要
Abstract
The importance of high-performance, low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing. The design and performance of a Ka-band balanced in-phase and quadrature-phase (I-Q) type vector modulator, using GaAs heterojunction bipolar transistors (HBTs) as switching elements, are presented. The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations. Measurements of the monolithic microwave integrated circuit (MMIC) chip with a size of 1.89 × 2.26 mm2 demonstrate an amplitude error below 1.5 dB and the phase error within 3° between 26 and 40 GHz except for a singular point at 35.6 GHz. The results show that the technique is suitable for millimeter-wave digital communications.关键词
Ka band/ vector modulator/ QPSK/ MMIC/ HBTKey words
Ka band/ vector modulator/ QPSK/ MMIC/ HBT引用本文复制引用
Cao Yuxiong,Wu Danyu,Chen Gaopeng,Jin Zhi,Liu Xinyu..Ka-band IQ vector modulator employing GaAs HBTs*[J].半导体学报,2011,32(6):91-95,5.基金项目
Project supported by the State Key Development Program for Basic Research of China (No.2010CB327505). （No.2010CB327505）
