物理学报2011，Vol.60Issue(6)：483-487,5.
铒离子注入碳化硅的射程和退火行为研究
Range and annealing behavior of Er ions implanted in SiC
摘要
Abstract
Er ions with an energy range of 300-500 keV are implanted in 6H-SiC crystal samples separately. The values of mean projected range Rp and range straggling △Rp of Er ions with a dose of 5 × 1015 cm-2 implanted in 6H-SiC crystal are measured by Rutherford backscattering technique. The measured data are compared with TRIM code prediction. It is seen that the experimental Rp values are in good agreement with theoretical values, but for △Rp values there are bigger differences between the experimental data and the theoretical values. Research shows that the higher the implanting energy, the heavier the damage is. Perfect recrystallization of 6H-SiC is achieved by annealing at 1400 ℃ , however it is accompanied by the segregation of Er ions to the surface.关键词
离子注入/投影射程和射程离散/退火行为/卢瑟福背散射技术Key words
ion implantation/projected range and range straggling/annealing behavior/Rutherford backscattering technique引用本文复制引用
秦希峰,梁毅,王凤翔,李双,付刚,季艳菊..铒离子注入碳化硅的射程和退火行为研究[J].物理学报,2011,60(6):483-487,5.基金项目
山东建筑大学校内基金(批准号:XN070109)和山东省自然科学基金(批准号:ZR2009FM031)资助的课题. （批准号:XN070109）
