物理学报2011，Vol.60Issue(6)：633-639,7.
H2气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响
Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering
摘要
Abstract
Aluminum doped zinc oxide ( AZO) thin films are prepared by pulsed magnetron sputtering in pure argon gas. In order to improve the properties of AZO thin films, we add hydrogen gas into vacuum during sputtering. High purity ceramic ZnO: A12O3 target and hydrogen gas at various flow rates are used as source materials. The microstructure, the surface information, the optical and electrical properties of AZO/H film are investigated. The crystallization, the Hall mobility and the transmission between 400 nm and 1100 nm are enhanced by increasing H2 flow rate, and resistivity is decreased, the lowest resistivities of these films are all 4. 435 × 10-4 Ω · cm, and AZO thin films with 5. 664 × 10-4 Ω · cm are achieved. In this experiment, it is observed that Raman peak is related to defects due to O-vacancies (579 cm-1 ) in the AZO/H thin films grown at different H2 flow rates. With the increase of hydrogen flow rate, the intensity of Raman peak at 579 cm-1 decreases. Finally, AZO and AZO/H thin films are etched in 0. 5% dilute hydrochloric acid. Compared with AZO thin films, AZO/H thin films can be relatively easy to achieve the light trapping structure with crater-type morphology.关键词
氧化锌/氢气流量/磁控溅射/太阳电池Key words
zinc oxide/ H2 flow rates/ magnetron sputtering/ solar cell引用本文复制引用
李林娜,陈新亮,王斐,孙建,张德坤,耿新华,赵颖..H2气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响[J].物理学报,2011,60(6):633-639,7.基金项目
国家重点基础研究发展计划(批准号:2006CB202602,2006CB202603)、国家高技术研究发展计划(批准号:2009AA050602)、天津市应用基础及前沿技术研究计划(批准号:09JCYBJC06900)和中央高校基本科研业务费专项资金资助的课题. （批准号:2006CB202602,2006CB202603）
