物理学报2011，Vol.60Issue(6)：743-747,5.
a-Si:H/SiO2多量子阱材料制备及其光学性能和微结构研究
Structural and optical properties of a-Si:H/SiO2multiple quantum wells
摘要
Abstract
a-Si: H/SiO2 multiple quantum wells ( QWs) are fabricated by plasma enhanced chemical vapor deposition (PECVD) and subsequent different thermal annealing. Among them the annealed sample under 1100 ℃ in vacuum can be transferred into nc-Si: H/SiO2 QWs, and the size of formed nc-Si: H is controllable and it matches the thickness of a-Si: H sublayer. The optical absorptivity of a-Si: H/SiO2 QWs is compared with that of a-Si: H under the same fabrication condition, the former is higher evidently in the UV/Visible spectrum with the absorption edge blue-shifted, which shows that a-Si: H/SiO2 QWs has an obvious quantum confinement effect. So it is feasible to use a-Si: H/SiO2 QWs to enhance the efficiency of silicon solar cells. In addition, the formation of nc-Si:H/SiO2 QWs with controllable size built the basis for new-type nanocrystalline silicon solar cells.关键词
多量子阱/量子限制效应/光学吸收/能带结构Key words
multiple quantum wells/ quantum confinement effect/ optical absorption/ energy band structure引用本文复制引用
马小凤,王懿喆,周呈悦..a-Si:H/SiO2多量子阱材料制备及其光学性能和微结构研究[J].物理学报,2011,60(6):743-747,5.基金项目
上海市自然科学基金(批准号:09ZR1430100)资助的课题. （批准号:09ZR1430100）
