物理学报2011，Vol.60Issue(6)：440-446,7.
锗硅/硅异质结材料的化学气相淀积生长动力学模型
A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials
摘要
Abstract
Based on Grove model of CVD( chemical vapor deposition) and Fick' s first law, we propose and build the RPCVD (reduced pressure chemical vapor deposition) growth kinetics model of GeSi/Si heterojunction materials. Different from previous SiGe/Si kinetics model, which only considers surface reaction controlling mechanism, our model simultaneously considers two controlling mechanisms: surface reaction and vapor transport. We also consider the model at these two controlling mechanism limits. This model is suitable for charactering the growth of both strained GeSi/Si heterojunction materials at low temperatures and relaxed GeSi/Si heterojunction materials at high temperatures. The calculated value of the model is compared with experimental results. Whether for the growth of strained SiGe at low temperature of 625 ℃ , or for the growth of relaxed SiGe at high temperature of 900 ℃ , the model error are both lower than 10% , which is the subject technical target.关键词
SiGe/Si异质结材料/化学气相淀积生长动力学模型/Grove理论/Fick第一定律Key words
SiGe/Si heterojunction materials/ chemical vapor deposition growth kinetics model/ Grove model/Fick's first law引用本文复制引用
戴显英,郝跃,金国强,董洁琼,王船宝,赵娴,楚亚萍,奚鹏程,邓文洪,张鹤鸣..锗硅/硅异质结材料的化学气相淀积生长动力学模型[J].物理学报,2011,60(6):440-446,7.基金项目
国家重点基础研究发展计划(批准号:6139801-1)、国防预研基金(批准号:914A08060407DZ0103)资助的课题. （批准号:6139801-1）
