西安理工大学学报2011，Vol.27Issue(2)：151-155,5.
GaAs光电导开关激子效应的光电导特性
摘要
Abstract
Starting from the effect of GaAs Photoconductive Semiconductor Switch ( PCSS) exciton and Photo-Activated Charge Domain ( PACD) theory, this paper studies photoconductive behaviors of GaAs photoconductive switch exciton effect in the case of strong electric field excitation. The interaction of PACD and exciton effect and exciton formation, transmission and free electrons and holes formed in the process of dissociation can provide the necessary conditions for exciton activated photoconduction. The major factors affecting exciton effect photoconductive behaviors are: exciton energy absorption, bound exciton and PACD induced band gap renormalization, multi-phonon transition, bound exciton split and drift along dislocation stress. In the case of coupling actions by the above factors, the photoconduction of GaAs photoconductive switch exciton effect appears to have a certain oscillation behaviors.关键词
GaAs光电导开关/光激发电荷畴/激子效应/光电导特性Key words
GaAs Photoconductive Semiconductor Switch ( PCSS) / Photo-Activated Charge Domain (PACD) / exciton effect/ photoconductive behaviors分类
社会科学引用本文复制引用
马湘蓉,施卫..GaAs光电导开关激子效应的光电导特性[J].西安理工大学学报,2011,27(2):151-155,5.基金项目
国家重点基础研究发展计划(973计划)资助项目(2007CB310406) （973计划）
国家自然科学基金资助项目(50837005,10876026). （50837005,10876026）
