福州大学学报（自然科学版）2011，Vol.39Issue(3)：395-398,403,5.DOI:CNKI:35-1117/N.20110526.1212.021
自组织生长Ge量子点材料研究
Study of self-assembled Ge quantum dots
摘要
Abstract
Ge quantum dots were grown on Si substrate by ultra - high vacuum chemical vapor deposition ( UHV/CVD). To get optimum conditions for growing Ge quantum dots, three factors and three levels orthogonal experiments were designed to study the influence of different conditions (such as substrate temperature, GeH4flux and growing time) on Ce quantum dots growth. The results of TEM (transmission electron microscopy) and DCXRD ( double crystal X - ray diffraction ) measurement showed good quality of multi - layer Ge quantum dots grown with the optimum conditions.关键词
超高真空/化学气相淀积/Ge量子点/Si衬底/正交实验Key words
ultra -high vacuum/ chemical vapor deposition/ Ge quantum dot/ Si substrate/ orthogonal experiments分类
信息技术与安全科学引用本文复制引用
魏榕山,何明华..自组织生长Ge量子点材料研究[J].福州大学学报（自然科学版）,2011,39(3):395-398,403,5.基金项目
福建省自然科学基金资助项目(2009J05143) （2009J05143）
福建省教育厅科研资助项目(JA09007) （JA09007）
福州大学科技发展基金资助项目(2009-XQ-31) （2009-XQ-31）
福州大学人才基金资助项目(XRC-0975) （XRC-0975）
