国防科技大学学报2011，Vol.33Issue(3)：89-94,6.
1.8V供电8.2ppm/℃的0.18μmCMOS带隙基准源
A 8.2ppm/°C Bandgap Voltage Reference with 1.8V Power Supply in 0.18μm CMOS Process
摘要
Abstract
Bandgap reference is a fundamental component in modem analog/mixed signal integrated circuits. In CMOS process, because of the small β value, the base-emitter path of the bipolar junction transistor has a significant streaming effect on the collector current,which leads to a laige drift on temperature for the bandgap reference. In this study, a current compensating technique is proposed to enhance die temperature stability of the bandgap reference, and the power supply rejection is improved with a noise feedback circuit. Experimental results in the 0.18μm CMOS process show that the temperature coefficient is 8.2ppm/℃ within the temperature range of - 55℃~150℃ on the 1.8V power supply, and the power supply rejection is greatly improved, the DC power supply rejection ratio is -90dB.关键词
带隙基准电压源/集电极电流/温度稳定性/电源抑制比/低电源电压Key words
bandgap voltage reference/collector current/tempeiature stability/ power supply rejection ratio/low voltage power supply分类
信息技术与安全科学引用本文复制引用
马卓,段志奎,杨方杰,郭阳,谢伦国..1.8V供电8.2ppm/℃的0.18μmCMOS带隙基准源[J].国防科技大学学报,2011,33(3):89-94,6.基金项目
教育部新世纪优秀人才支持计划资助(NCET) （NCET）
