半导体学报2011，Vol.32Issue(7)：20-27,8.DOI:10.1088/1674-4926/32/7/074002
New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs
摘要
Abstract
Using an exact solution of two-dimensional Poisson's equation in cylindrical coordinates,a new analytical model comprising electrostatic potential,electric field,threshold voltage and subthreshold current for halodoped surrounding-gate MOSFETs is developed.It is found that a new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of the silicon channel is much larger than that of the oxide.It is also revealed that moderate halo doping concentration,thin gate oxide thickness and small silicon channel radius are needed to improve the threshold voltage characteristics.The derived analytical model agrees well with a three-dimensional numerical device simulator ISE.关键词
MOSFETs/cylindrical surrounding-gate/threshold voltage/analytical model/haloKey words
MOSFETs/cylindrical surrounding-gate/threshold voltage/analytical model/halo引用本文复制引用
Li Cong,Zhuang Yiqi,Han Ru..New analytical threshold voltage model for halo-doped cylindrical surrounding-gate MOSFETs[J].半导体学报,2011,32(7):20-27,8.基金项目
Project supported by the National Natural Science Foundation of China (No.61076101). （No.61076101）
