半导体学报2011，Vol.32Issue(7)：42-45,4.DOI:10.1088/1674-4926/32/7/074006
A new high voltage SOILDMOS with triple RESURF structure
A new high voltage SOILDMOS with triple RESURF structure
摘要
Abstract
A novel triple RESURF (T-resurf) SOILDMOS structure is proposed.This structure has a P-type buried layer.Firstly,the depletion layer can extend on both sides of the P-buried layer,serving as a triple RESURF and leading to a high drift doping and a low on-resistance.Secondly,at a high doping concentration of the drift region,the P-layer can reduce high bulk electric field in the drift region and enhance the vertical electric field at the drain side,which results in uniform bulk electric field distributions and an enhanced BV.The proposed structure is used in SOI devices for the first time.The T-resurf SOILDMOS with BV =315 V is obtained by simulation on a 6 μm-thick SOI layer over a 2 μm-thick buried oxide layer,and its Rsp is reduced from 16.5 to 13.8 mΩ.cm2 in comparison with the double RESURF (D-resurf) SOILDMOS.When the thickness of the SOI layer increases,T-resurf SOILDMOS displays a more obvious effect on the enhancement of BV2/Ron.It reduces Rsp by 25% in 400 V SOILDMOS and by 38% in 550 V SOI LDMOS compared with the D-resurf structure.关键词
SOILDMOS/double resurf/triple resurf/REBULF/breakdown voltageKey words
SOILDMOS/double resurf/triple resurf/REBULF/breakdown voltage引用本文复制引用
Hu Xiarong,Zhang Bo,Luo Xiaorong,Yao Guoliang,Chen Xi,Li Zhaoji..A new high voltage SOILDMOS with triple RESURF structure[J].半导体学报,2011,32(7):42-45,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.60806025,60976060). （Nos.60806025,60976060）
