半导体学报2011，Vol.32Issue(7)：142-144,3.DOI:10.1088/1674-4926/32/7/075013
A process-insensitive thermal protection circuit
A process-insensitive thermal protection circuit
Zhao Lei 1Zhang Haiying 1Huang Shuilong 1Wang Xiaosong1
作者信息
- 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- 折叠
摘要
Abstract
A novel process-insensitive thermal protection structure has been developed.This circuit contains several sub-circuits such as band-gap reference,reference output buffer,resistance voltage divider branch,and hysteresis circuit.By using reference buffer,the precise reference voltage from band-gap reference is delivered to resistance voltage divider branch and is divided precisely.Then the threshold temperatures of this protection circuit can be set by this precise voltage,unaffected by process variation and mismatch.A hysteresis circuit is also used here to prevent thermal oscillation.This circuit is fabricated in TSMC 0.18 μm CMOS technology,and occupies about 3 × 104μm2 chip area.关键词
thermal protection/precise threshold temperature/process variation insensitive/mismatch insensitiveKey words
thermal protection/precise threshold temperature/process variation insensitive/mismatch insensitive引用本文复制引用
Zhao Lei,Zhang Haiying,Huang Shuilong,Wang Xiaosong..A process-insensitive thermal protection circuit[J].半导体学报,2011,32(7):142-144,3.
