半导体学报2011，Vol.32Issue(7)：145-149,5.DOI:10.1088/1674-4926/32/7/076001
Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementarymetal-oxide-semiconductor devices
Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementarymetal-oxide-semiconductor devices
摘要
Abstract
A novel dry etching process of a poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor (CMOS) devices is investigated.Our strategy to process a poly-Si/TaN/HfSiON gate stack is that each layer of gate stack is selectively etched with a vertical profile.First,a three-step plasma etching process is developed to get a vertical poly-Si profile and a reliable etch-stop on a TaN metal gate.Then different BCl3-based plasmas are applied to etch the TaN metal gate and find that BC13/Cl2/O2/Ar plasma is a suitable choice to get a vertical TaN profile.Moreover,considering that C12 almost has no selectivity to Si substrate,BCl3/Ar plasma is applied to etch HfSiON dielectric to improve the selectivity to Si substrate after the TaN metal gate is vertically etched off by the optimized BCl3/Cl2/O2/Ar plasma.Finally,we have succeeded in etching a poly-Si/TaN/HfSiON stack with a vertical profile and almost no Si loss utilizing these new etching technologies.关键词
TaN metal gate/HfSiON high-k/plasma etching/selectivity/integrationKey words
TaN metal gate/HfSiON high-k/plasma etching/selectivity/integration引用本文复制引用
Li Yongliang,Xu Qiuxia..Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementarymetal-oxide-semiconductor devices[J].半导体学报,2011,32(7):145-149,5.基金项目
Project supported by the Special Funds for Major State Basic Research Projects,China (No.2006CB302704) and the National Natural Science Foundation of China (No.60776030). （No.2006CB302704）
