物理化学学报2011，Vol.27Issue(12)：2831-2835,5.DOI:10.3866/PKU.WHXB20112831
石墨烯氧化物薄膜电极的光电化学特性
Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes
摘要
Abstract
A series of graphene oxide (GO) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements.A cathodic photocurrent was observed for the GO electrodes and the photocurrent density was influenced by the thickness of the films. The GO film electrode with an average thickness of 27 nm gave a by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of GO films by controlling the film thickness or UV irradiation time.关键词
石墨烯氧化物/光电化学性能/阴极光电流/膜厚/紫外光照Key words
Graphene oxide/Photoelectrochemical property/Cathodic photocurrent/Film thickness/UV irradiation分类
化学化工引用本文复制引用
张晓艳,孙明轩,孙钰珺,李靖,宋鹏,孙通,崔晓莉..石墨烯氧化物薄膜电极的光电化学特性[J].物理化学学报,2011,27(12):2831-2835,5.基金项目
国家重点基础研究发展规划项目(973) (2011CB933302,2010CB933703),上海市科学技术委员会纳米项目(1052nm01800)及复旦大学研究生创新基金资助 （973）
