现代电子技术2011，Vol.34Issue(13)：189-191,3.
分压-自偏压共源放大电路的Multisim仿真研究
Multisim Simulation of Partial Pressure and Self-bias Pressure Common Source Amplification Circuit
摘要
Abstract
Since different components have different performance parameters which may lead to some complex theoretical calculations and situation which is cumbersome and difficult to understand in the analysis of FET circuit, a method of Multisim simulation research for the partial pressure &- self-bias voltage common source amplification circuits is proposed, according to the theoretical study of the partial pressure &. Self-bias voltage common source amplification circuits compbsed of N-channel enhancement mode MOS FET after the simulation of the actual working condition of the circuits by the aid of Multisim simulation software.关键词
场效应管；分压-自偏压共源极放大电路；Multisim；仿真分析Key words
FET/ Partial pressure and self-bias pressure common source amplifcation circuit/ Multisim/ simulation analysis分类
信息技术与安全科学引用本文复制引用
李永清..分压-自偏压共源放大电路的Multisim仿真研究[J].现代电子技术,2011,34(13):189-191,3.基金项目
辽宁省教育科学“十一五”规划项目(JG08DB225) （JG08DB225）
